|Education:||B.Tech.,Metallurgical Eng., Banaras Hindu University|
|Publications:||Publications by Adusumilli in our database|
Materials Science and Engineering
2220 North Campus Drive
Evanston, IL 60208
Modern day electronic gadgets and the whole information age have been spawned by incessant innovation in the microelectronics industry. Ever faster and powerful electronic devices have been achieved by the continuous miniaturization of the basic building block of the microprocessor: the transistor. We are at the nanometer scale and the limit to further shrinking of these devices is a major show stopper for continued enhancement of transistor performance. Evaluation of new microelectronic materials and device geometries is the goal of my thesis research. I am exploring nickel silicide contacts, ultra-shallow junctions and novel multi-gate designs for advanced transistors of the future.
I study the phase evolution sequence and kinetics of reactive diffusion in Pt/Pd doped nickel silicide thin films using high resolution atom-probe tomography and X-ray diffraction experiments. Figure 1 below shows the short-circuit diffusion of Pt via grain boundaries in the NiSi after rapid thermal annealing at 420 K. In depth analysis of datasets such as these give us an understanding of the kinetic pathways to the diffusion of Pt during the simultaneous reaction between Ni and Si. Pt distribution profiles, in concert with phase evaluation from X-ray diffraction, explain why Pt doped NiSi thin films are more stable during chip fabrication. These alloys will be the electrical contacts for future transistors which are less resistant to current flow. These will be the building blocks for future devices which consume less power and operate for longer periods on a single charge.
Figure 1-Short-circuit diffusion of Pt via grain boundaries in nickel monosilicide formed as a result of rapid thermal annealing of Ni0.95Pt0.05/Si (100) thin films at 420 K. Nickel, silicon and platinum atoms are shown in green, blue and red respectively.