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Lee, J. S.; Liu, K. S.; Chuang, F. Y.; Sun, C. Y.; Huang, C. M.; Lin, I. N. |
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Publication |
Effect of Au buffer on the field emission characteristics of chemical vapor deposited diamond films |
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Journal Article |
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1997 |
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Abstract |
Applied Surface Science |
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Corporate Author |
Appl. Surf. Sci. |
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113-114 |
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Summary Language |
264-268 |
Series Editor |
Field Emission |
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2446 |
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Lee, C. G.; Ahn, H. Y.; Lee, J. D. |
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Scaling-down of cone-like field emitter using LOCOS |
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Journal Article |
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1995 |
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Tech. Dig. |
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401-404 |
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Field Emission |
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2460 |
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Kim, I. H.; Lee, H.; C. G., L; Kim, Y. H.; Park, B. G.; Lee, J. D. |
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Fabrication of metal field emitter arrays on polycrystalline silicon |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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468-471 |
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Field Emission |
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2478 |
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Kim, S. - J.; Ju, B. K.; Lee, Y. H.; Park, B. S.; Baik, Y. - J.; Lim, S.; Oh, M. H. |
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Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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499-502 |
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Field Emission |
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2480 |
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Lee, S.; Ju, B. K.; Lee, Y. H.; Jeon, D.; Oh, M. H. |
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Fabrication and field emission study of gated diamondike-carbon-coated silicon tips |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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425-427 |
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Field Emission |
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2481 |
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Lee, S.; Lee, S.; Lee, S.; Jeon, D.; Lee, K. - R. |
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Self-aligned silicon tips coated with diamondlike carbon |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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457-459 |
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Field Emission |
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2482 |
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Lee, Y. H.; Song, M. H.; Ju, B. K.; Shin, D. K.; Oh, M. H. |
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Thin film phosphor prepared by physical vapor deposition for field emission display application |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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512-515 |
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Field Emission |
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2483 |
| Permanent link to this record |
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Uh, H. S.; Kwon, S. J.; Lee, J. D. |
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Process design and emission properties of gated n+ polycrystalline silicon field emitter arrays for flat-panel display applications |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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472-476 |
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Field Emission |
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2491 |
| Permanent link to this record |
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Jung, Y. H.; Ju, B. K.; Jung, J. H.; Lee, Y. H.; Oh, M. H.; Kim, C. J. |
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Characteristics on the gate insulator of metal tip field emitter arrays after wetting etching process |
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Journal Article |
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1997 |
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Japanese Journal of Applied Physics |
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Jpn. J. Appl. Phys. |
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36 |
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3576-3579 |
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Field Emission |
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2534 |
| Permanent link to this record |
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Chi, E. J.; Shim, J. Y.; Baik, H. K.; Lee, S. M. |
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Fabrication of amorphous-carbon-nitride field emitters |
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Journal Article |
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1997 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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71 |
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324-326 |
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Field Emission; Field emitters; Eutectic silicon; Electric currents; Carbon; Electron affinities |
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o improve siliconfield emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed. a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current. |
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NU @ karnesky @ |
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2540 |
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