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Kim, Y.-C.; Adusumilli, P.; Lauhon, L.J.; Seidman, D.N.; Jung, S.-Y.; Lee, H.-D.; Alvis, R.L.; Ulfig, R.M.; Olson, J.D. |
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Three-dimensional atomic-scale mapping of Pd in Ni[sub:1 - x]Pd[sub:x]Si/Si(100) thin films |
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2007 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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91 |
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11 |
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113106:1-3 |
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annealing; interface roughness; nickel compounds; palladium compounds; rapid thermal processing; semiconductor-metal boundaries |
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Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95Pd0.05)Si/Si(100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated. |
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NU @ karnesky @ |
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9944 |
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Galtrey, M.J.; Oliver, R.A.; Kappers, M.J.; McAleese, C.; Zhu, D.; Humphreys, C.J.; Clifton, P.H.; Larson, D.; Cerezo, A. |
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Compositional inhomogeneity of a high-efficiency In[sub x]Ga[sub 1 - x]N based multiple quantum well ultraviolet emitter studied by three dimensional atom probe |
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Journal Article |
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2008 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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92 |
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4 |
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041904-3 |
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III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors |
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An InxGa1−xN based multiple quantum well structure emitting in the ultraviolet, which has the highest reported efficiency (67%) at its wavelength (380 nm), was analyzed with the three-dimensional atom probe. The results reveal gross discontinuities and compositional variations within the quantum well layers on a 20–100 nm length scale. In addition, the analysis shows the presence of indium in the AlyGa1−yN barrier layers, albeit at a very low level. By comparing with analogous epilayer samples, we suggest that the quantum well discontinuities we observe may play an important role in improving the efficiency of these structures. |
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NU @ karnesky @ |
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10199 |
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Mao, Zugang; Kim, Yeong-Cheol; Lee, Hi-Deok; Adusumilli, Praneet; Seidman, David N. |
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NiSi crystal structure, site preference, and partitioning behavior of palladium in NiSi(Pd)/Si(100) thin films: Experiments and calculations |
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Journal Article |
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2011 |
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Applied Physics Letters |
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99 |
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1 |
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013106 |
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ab initio calculations; crystal structure; metallic thin films; nickel alloys; palladium alloys; silicon alloys; tomography; X-ray diffraction |
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The crystal structure of a NiSi thin-film on a Si substrate and Pd site-substitution in NiSi and the partitioning behavior of Pd for NiSi(Pd)/Si(100) are investigated by x-ray diffraction (XRD), first-principles calculations, and atom-probe tomography (APT). The NiSi layer is a distorted orthorhombic structure from XRD patterns via experiments and calculations. We find that Pd has a strong driving force, 0.72 eV atom−1, for partitioning from Si into the orthorhombic NiSi layer. The calculated substitutional energies of Pd in NiSi indicate that Pd has a strong preference for Ni sublattice-sites, which is in agreement with concentration profiles determined by APT. |
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0003-6951 |
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NU @ karnesky @ ref10.1063/1.3606536 |
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11169 |
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Koops, P., H W; Kretz, J.; Rudolph, M.; Weber, M.; Dahm, G.; Lee, K. L. |
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Characterization and application of materials grown by electron-beam-induced deposition |
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1994 |
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Japanese Journal of Applied Physics |
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Jpn. J. Appl. Phys. |
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33 |
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7099-7107 |
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Scanning Tunnelling Microscopy |
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3083 |
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Lee, Byeong-Joo; Jang, Je-Wook |
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A modified embedded-atom method interatomic potential for the Fe–H system |
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Journal Article |
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2007 |
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Acta Materialia |
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55 |
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20 |
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6779-6788 |
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Modified embedded-atom method; Iron–hydrogen alloys; Atomistic simulation; Molecular dynamics; Lattice defect |
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A modified embedded-atom method (MEAM) interatomic potential for the Fe–H binary system has been developed using previously developed MEAM potentials of Fe and H. The potential parameters were determined by fitting to experimental data on the dilute heat of solution of hydrogen in body-centered cubic (bcc) and face-centered cubic (fcc) Fe, the vacancy–hydrogen binding energy in bcc Fe, and to a first-principles calculation for the lattice parameter and bulk modulus of a hypothetical NaCl-type FeH. The potential accurately reproduces the known physical properties of hydrogen as an interstitial solute element in bcc and fcc Fe. The applicability of the potential to atomistic approaches for investigating interactions between hydrogen atoms and other defects such as vacancies, dislocations and grain boundaries, and also for investigating the effects of hydrogen on various deformation and mechanical behaviors of iron is demonstrated. |
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1359-6454 |
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NU @ karnesky @ |
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11399 |
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Gaudin, G. A.; Lee, G., M J |
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Electronic structure of copper overlayers on the (100) and (111) surfaces of tungsten |
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1994 |
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Physical Review |
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Phys. Rev. |
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B49 |
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5575-5584 |
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Field Emission |
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3134 |
| Permanent link to this record |
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Knipling, Keith E.; Karnesky, Richard A.; Lee, Constance P.; Dunand, David C.; Seidman, David N. |
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Precipitation Evolution in Al-0.1Sc, Al-0.1Zr, and Al-0.1Sc-0.1Zr (at.%) Alloys during Isochronal Aging |
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Journal Article |
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2010 |
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Acta Materialia |
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58 |
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15 |
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5184-5195 |
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Aluminum alloys, Precipitation, Scandium, Zirconium, Atom-probe tomography; Al-Sc-Zr |
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Precipitation strengthening is investigated in binary Al-0.1Sc, Al-0.1Zr, and ternary Al-0.1Sc-0.1Zr (at.%) alloys aged isochronally between 200 and 600 °C. A pronounced synergistic effect is observed when both Sc and Zr are present. Above 325 °C, where peak microhardness (670 MPa) occurs in the binary Al-Sc alloy due to Al[sub:3]Sc (L1[sub:2]) nanometer-scale precipitates, Zr additions result in a secondary increase in strength due to additional precipitation of Zr-enriched outer shells onto these precipitates. The ternary alloy reaches a peak microhardness of 780 MPa at 400 °C, delaying overaging by >100 °C compared with the binary Al-Sc alloy and increasing strength compared with the binary Al-Zr alloy (peak microhardness of 420 MPa at 425–450 °C). Compositions, radii, volume fractions, and number densities of the Al[sub:3](Sc[sub:1-x]Zr[sub:x]) precipitates are measured directly using atom-probe tomography. This information is used to quantify the observed strengthening increments, attributed to dislocation shearing of the Al[sub:3](Sc[sub:1-x]Zr[sub:x]) precipitates. |
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NU @ karnesky @ |
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10705 |
| Permanent link to this record |
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Lee, B.C.; Park, J.K. |
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Effect of the addition of Ag on the strengthening of Al3Li phase in Al-Li single crystals |
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Journal Article |
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1998 |
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Acta Materialia |
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46 |
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4181-4187 |
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The variation of the critical resolved shear stress as a function of aging condition has been measured in ternary Al-~(1.9-2.0) wt% Li-~0.4 wt% Ag single crystals and has been analyzed using the same version of order-hardening theory as in our previous work in binary single crystals. The result showed that the antiphase boundary energy of the Al3Li lattice on {111} definitively increases from about 0.118 J/m2 in binary crystals to 0.128+/-0.012 J/m2 in ternary crystals, in good agreement with the analysis of the transition behavior from shearing to looping and of the dislocation pair spacings. A strong segregation tendency of Ag into the Al3Li lattice is believed to be responsible for this increment. Our previous result of [gamma]apb (0.118+/-0.006 J/m2) in binary crystals is, although unlikely from the recent suggestion of Nembach, the best value one can obtain from the recent knowledge of order-hardening theory. This is slightly larger than that (about 0.100 J/m2) obtained from the analysis of the transition from shearing to looping and somewhat larger than the result (about 0.085 J/m2) of the first-principles calculation. Three factors are discussed as principal causes of a possibility of an overestimation of [gamma]apb on applying order-hardening theory. |
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NU @ karnesky @ |
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9941 |
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Jeon, B. - S.; Yoo, J. S.; Lee, J. D. |
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Electrophoretic deposition of ZnO:Zn phosphor for field emission display applications |
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Journal Article |
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1996 |
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J. Electrochem. Soc. |
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143 |
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3923-3927 |
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Field Emission |
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2158 |
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Jung, Y. H.; Ju, B. K.; Jung, J. H.; Lee, Y. H.; Oh, M. H.; Kim, C. J. |
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Characteristics on the gate insulator of metal tip field emitter arrays after wetting etching process |
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Journal Article |
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1997 |
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Japanese Journal of Applied Physics |
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Jpn. J. Appl. Phys. |
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36 |
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3576-3579 |
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Field Emission |
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2534 |
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