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Jung, J. H.; Ju, B. K.; Lee, Y. H.; Jang, J.; Oh, M. H. |
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Enhancement of electron emission efficiency and stability of molybdenum-tip field emitter array by diamond like carbon coating |
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1997 |
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IEEE Electron Device Lett. |
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18 |
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197-199 |
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Field Emission |
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3140 |
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Lee, M. J. G.; Holzwarth, N. A. W. |
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Surface electronic wave functions of a semi-infinite muffin-tin lattice. II. Application to copper (001) and (110) |
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1978 |
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Phys. Rev. B, Condens. Matter |
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18, |
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7451 |
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Seol, J.; Lim, N.; Lee, B.; Renaud, L.; Park, C. |
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Atom probe tomography and nano secondary ion mass spectroscopy investigation of the segregation of boron at austenite grain boundaries in 0.5 wt.% carbon steels |
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Journal Article |
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2011 |
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Metals and Materials International |
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17 |
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3 |
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413-416 |
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Metallic Materials |
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The grain boundary segregation of boron atoms in high strength low alloy steels containing 50 ppm boron was accomplished using atom probe tomography (APT) and nano-beam secondary ion mass spectroscopy (SIMS). The formation of boro-carbides under an excessive addition of boron to the steels was identified through the SIMS and TEM. The APT was performed in order to evaluate the composition of the alloying elements, such as, boron and carbon, segregated at prior austenite grain boundaries. The boron contents at the prior austenite grain boundaries were approximately 1.7 ± 0.2 at.%, which was approximately 70 times more than the amount of boron added to the steels. |
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The Korean Institute of Metals and Materials, co-published with Springer Netherlands |
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1598-9623 |
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NU @ karnesky @ |
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11171 |
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Uh, H. S.; Kwon, S. J.; Lee, J. D. |
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A novel fabrication process of a silicon field emitter array with thermal oxide as a gate insulator |
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Journal Article |
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1995 |
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IEEE Electron Device Lett. |
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16 |
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488-490 |
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Field Emission |
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2731 |
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Zhou, F.; Lee, J.; Dallek, S.; Lavernia, E.J. |
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High grain size stability of nanocrystalline Al prepared by mechanical attrition |
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Journal Article |
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2001 |
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Journal of Materials Research |
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J. Mater. Res. |
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16 |
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12 |
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3451-3458 |
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Grain growth in nanocrystalline (nc) Al with a grain size of 26 nm produced by cryogenic mechanical milling was studied through x-ray diffraction, transmission electron microscopy, and differential scanning calorimetry. Grain growth kinetics resembled those of ball-milled nc Fe. For homologous temperatures (T/TM) of 0.61-0.83, the time exponent n from D1/n - D01/n = kt was 0.04-0.28, tending toward 0.5 as T/TM increased. Two grain-growth regimes were distinguished: below T/TM = 0.78 growth ceased at an approximate grain size of 50 nm while at higher temperatures, grain growth proceeded steadily to the submicrometer range. Grain growth over the range of temperatures studied cannot be explained in terms of a single thermally activated rate process. The observed high grain size stability was attributed primarily to impurity pinning drag associated with the grain growth process. |
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0884-2914 |
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NU @ karnesky @ 2757 |
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10753 |
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Kim, I. H.; Lee, H.; C. G., L; Kim, Y. H.; Park, B. G.; Lee, J. D. |
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Fabrication of metal field emitter arrays on polycrystalline silicon |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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468-471 |
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Field Emission |
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2478 |
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Kim, S. - J.; Ju, B. K.; Lee, Y. H.; Park, B. S.; Baik, Y. - J.; Lim, S.; Oh, M. H. |
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Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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499-502 |
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Field Emission |
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2480 |
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Lee, S.; Ju, B. K.; Lee, Y. H.; Jeon, D.; Oh, M. H. |
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Fabrication and field emission study of gated diamondike-carbon-coated silicon tips |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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425-427 |
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Field Emission |
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2481 |
Permanent link to this record |
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Lee, S.; Lee, S.; Lee, S.; Jeon, D.; Lee, K. - R. |
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Self-aligned silicon tips coated with diamondlike carbon |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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457-459 |
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Field Emission |
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2482 |
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Lee, Y. H.; Song, M. H.; Ju, B. K.; Shin, D. K.; Oh, M. H. |
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Thin film phosphor prepared by physical vapor deposition for field emission display application |
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Journal Article |
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1997 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B15 |
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512-515 |
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Field Emission |
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2483 |
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