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Ladwig, Peter F.; Olson, Jesse D.; Bunton, Joseph H.; Larson, David J.; Ulfig, Robert M.; Martens, Richard L.; Gribb, Tye T.; Kelly, Thomas F.; Bonsager, Martin C.; Schultz, Allan E.; Pant, Bharat B.; Chang, Y. Austin |
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Intermixing and phase separation at the atomic scale in Co-rich (Co,Fe) and Cu multilayered nanostructures |
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2005 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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87 |
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121912:1-3 |
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LEAP |
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Abbreviated Series Title |
Despite the fact that Co-rich (Co,Fe) alloys and Cu are immiscible materials in bulk form, evidence of thermally induced mixing at the atomic scale has been observed in thin-film multilayers of (Co,Fe) and Cu. However, long term anneals at lower temperatures produced a breakup of the multilayers into a two-phase mixture of (Co,Fe) and Cu particles. The observations were made with the use of the three-dimensional atom probe technique, with supporting evidence from differential scanning calorimetry and x-ray diffraction. Besides their scientific importance, these results are of interest where these (Co,Fe) and Cu thin films are used to produce the giant magnetoresistive effect. |
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NU @ karnesky @ |
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420 |
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D J Larson and D Lawrence and W Lefebvre and D Olson and T J Prosa and D A Reinhard and R M Ulfig and P H Clifton and J H Bunton and D Lenz and J D Olson and L Renaud and I Martin and T F Kelly |
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Toward atom probe tomography of microelectronic devices |
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2011 |
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Journal of Physics: Conference Series |
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326 |
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1 |
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012030 |
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Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel ® i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips. |
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1742-6596 |
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NU @ karnesky @ |
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11288 |
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Soisson, F.; Barbu, A.; Martin, G. |
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Monte Carlo simulations of copper precipitation in dilute iron-copper alloys during thermal ageing and under electron irradiation |
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1996 |
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Acta Materialia |
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Acta Mater. |
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44 |
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3789-3800 |
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We propose a Monte Carlo simulation of the coherent precipitation of copper in [alpha]-iron using a vacancy diffusion mechanism. The only adjustable parameters are the vacancy concentration and the local vacancy jump frequencies. The latter are deduced from pair interactions restricted to nearest neighbour atoms. Precipitation kinetics are compared to recent experimental studies of precipitation in dilute Fe---Cu solid solutions during thermal ageing or electron irradiation (electrical resistivity measurements). The degree of advancement of the unmixing process as a function of time has the form of a stretched exponential, in good agreement with experiment. The simulation also provides interesting information on precipitate morphology and growth mechanisms which are useful for experimental data analysis. |
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NU @ karnesky @ |
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1917 |
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Martin, G. |
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A diffuse interface model for the interfacial transfer coefficient |
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Journal Article |
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2005 |
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Acta Materialia |
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53 |
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9 |
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2629-2632 |
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Diffusion; Interfaces; Alloys; Kinetics; Phase field models; Theory |
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Based on an extension to non-equilibrium problems, of Cahn's interface layer thermodynamics, we demonstrate that the matrix of transfer coefficients across a coherent interface between two phases, [alpha] and [beta], can be viewed as a correction to the Onsager's matrix of mobility coefficients along the continuous concentration profile. The latter coefficients are defined along the equilibrium concentration profile in the interfacial layer and in the [alpha]- and [beta]-phases. Combining the above definition with that of solute interfacial excess, we can define transfer coefficients relative to two components chosen arbitrarily, the values of which are intrinsic properties of the interfacial layer, independent of its precise location and thickness. |
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NU @ p-kolli @ |
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9702 |
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Clouet, Emmanuel; Barbu, Alain; La, Ludovic; Martin, Georges |
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Precipitation kinetics of Al3Zr and Al3Sc in aluminum alloys modeled with cluster dynamics |
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Journal Article |
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2005 |
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Acta Materialia |
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Acta Mater. |
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53 |
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8 |
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2313-2325 |
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Precipitation; Kinetics; Aluminum alloys; Cluster dynamics |
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Precipitation kinetics of Al3Zr and Al3Sc in aluminum supersaturated solid solutions is studied using cluster dynamics, a mesoscopic modeling technique which describes the various stages of homogeneous precipitation by a single set of rate equations. The only parameters needed are the interface free energy and the diffusion coefficient which are deduced from an atomic model previously developed to study the same alloys. A comparison with kinetic Monte-Carlo simulations based on the vacancy diffusion mechanism shows that cluster dynamics correctly predicts the precipitation kinetics provided a size dependent interface free energy is used. It also manages to reproduce reasonably well existing experimental data. |
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NU @ karnesky @ |
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211 |
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Pareige, C.; Soisson, F.; Martin, G.; Blavette, D. |
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Ordering and phase separation in Ni-Cr-Al: Monte Carlo simulations vs three-dimensional atom probe |
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Journal Article |
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1999 |
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Acta Materialia |
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Acta Mater. |
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47 |
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1889-1899 |
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3D Atom Probe, Phase transformation |
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2401 |
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Mao, Zugang; Booth-Morrison, Christopher; Sudbrack, Chantal K.; Martin, Georges; Seidman, David N. |
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Kinetic pathways for phase separation: An atomic-scale study in Ni–Al–Cr alloys |
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Journal Article |
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2011 |
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Acta Materialia |
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60 |
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4 |
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1871-1888 |
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Nickel-based superalloys; Kinetic pathways; Atom probe tomography; Lattice kinetic Monte Carlo; Nanostructures |
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The kinetic pathways involved in the formation of [gamma]'(L12 structure)-precipitates during aging of concentrated Ni–Al–Cr alloys at 873 K, for three distinct alloy compositions, are studied experimentally by atom probe tomography, and computationally with lattice kinetic Monte Carlo (LKMC) simulations using parameters deduced from first-principles calculations of cohesive energies, and from experimental diffusion data. It is found that the compositional evolution of the [gamma]'-precipitate phase does not follow the predictions of a classical mean-field model for coarsening of precipitates in ternary alloys. LKMC simulations reveal that long-range vacancy–solute binding plays a key role during the early stages of [gamma]'-precipitation. With the aid of Monte Carlo techniques using the parameters employed in the LKMC simulations, we compute the diffusion matrix in the terminal solid-solutions and demonstrate that key features of the observed kinetic pathways are the result of kinetic couplings among the diffusional fluxes. The latter are controlled by the long-range vacancy–solute binding energies. It is concluded that, because it neglects flux couplings, the classical mean-field approach to phase separation for a ternary alloy, despite its many qualitatively correct predictions, fails to describe quantitatively the true kinetic pathways that lead to phase separation in concentrated metallic alloys. |
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1359-6454 |
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NU @ karnesky @ |
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11306 |
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Martinez, E.; Ronsheim, P.; Barnes, J.-P.; Rochat, N.; Py, M.; Hatzistergos, M.; Renault, O.; Silly, M.; Sirotti, F.; Bertin, F.; Gambacorti, N. |
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Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack |
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Journal Article |
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2011 |
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Microelectronic Engineering |
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Proceedings of the 17th Biennial International Insulating Films on Semiconductor Conference, 17th Bi |
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88 |
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7 |
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1349-1352 |
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Metal/high-k stack; TiN; HfSiO; La; Interfacial dipole; Threshold voltage tuning; ToF-SIMS; Apt; Atr-Ftir; S-Xps |
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Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaOx layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO2 interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO2 interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment. |
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0167-9317 |
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NU @ karnesky @ |
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11170 |
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Martin, G. |
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Reconciling the Classical Nucleation Theory and Atomic Scale Observations and Modeling |
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Journal Article |
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2006 |
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Advanced Engineering Materials |
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12 |
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1231-1236 |
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Cast iron • Fatigue • Graphite |
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No abstract. |
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1527-2648 |
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NU @ karnesky @ Martin2006 |
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1859 |
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Clouet, E.; Nastar, M.; Barbu, A.; Sigli, C.; Martin, G. |
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An Atomic and Mesoscopic Study of Precipitation Kinetics in Al-Zr-Sc Alloys |
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Journal Article |
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2006 |
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Advanced Engineering Materials |
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8 |
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12 |
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1228-1231 |
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Aluminum alloys • Kinetics • Precipitation |
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No abstract. |
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1527-2648 |
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NU @ karnesky @ E.Clouet2006 |
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1856 |
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