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Holzworth, M.R.; Rudawski, N.G.; Pearton, S.J.; Jones, K.S.; Lu, L.; Kang, T.S.; Ren, F.; Johnson, J.W. |
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Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor |
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Journal Article |
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2011 |
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Abstract |
Applied Physics Letters |
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Appl. Phys. Lett. |
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98 |
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12 |
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Summary Language |
122103-3 |
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aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; insulated gate field effect transistors; reliability; scanning electron microscopy; transmission electron microscopy |
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Abbreviated Series Title |
A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors. |
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NU @ karnesky @ |
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11102 |
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Chen, Yu-chen Karen; Chu, Yong S.; Yi, JaeMock; McNulty, Ian; Shen, Qun; Voorhees, Peter W.; Dunand, David C. |
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Morphological and topological analysis of coarsened nanoporous gold by x-ray nanotomography |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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96 |
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4 |
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043122-043122 |
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computerised tomography; diffusion; gold alloys; nanoporous materials; phase separation; silver alloys; X-ray microscopy |
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We used x-ray nanotomography to characterize the three-dimensional (3D) morphology and topology of dealloyed nanoporous gold after coarsening. The interface shape distribution obtained from the nanotomography measurement shows that the coarsening does not proceed by bulk diffusion. The surface normal distribution shows that the morphology of the nanoporous gold is anisotropic. The topology of nanoporous gold is similar to that of other bicontinuous structures created by phase separation, despite the radically different method used to produce the structures. This work opens the door to time-resolved, in situ studies of coarsening of nanoporous gold in 3D. |
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0003-6951 |
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NU @ m-krug @ 110 |
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10847 |
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Grenier, A.; Larde, R.; Cadel, E.; Vurpillot, F.; Juraszek, J.; Teillet, J.; Tiercelin, N. |
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Atomic-scale study of TbCo[sub 2.5]/Fe multilayers by laser-assisted tomographic atom probe |
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Journal Article |
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2007 |
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Journal of Applied Physics |
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J. Appl. Phys. |
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102 |
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3 |
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033912-33914 |
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Sputtered (TbCo2.5 25 nm/Fe 20 nm) multilayers have been analyzed by laser-assisted tomographic atom probe. It allowed us to perform three-dimensional reconstructions of the layers and to determine their composition at the atomic scale. From the concentration profiles inside the multilayer, we show that the diffused interfaces are not symmetric and that a stronger Fe-Co mixing is present at the top of the crystalline iron layers as compared to the top of amorphous TbCo layers. |
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NU @ karnesky @ |
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9807 |
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D J Larson and D Lawrence and W Lefebvre and D Olson and T J Prosa and D A Reinhard and R M Ulfig and P H Clifton and J H Bunton and D Lenz and J D Olson and L Renaud and I Martin and T F Kelly |
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Toward atom probe tomography of microelectronic devices |
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Journal Article |
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2011 |
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Journal of Physics: Conference Series |
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326 |
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1 |
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012030 |
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Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel ® i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips. |
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1742-6596 |
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NU @ karnesky @ |
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11288 |
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Hu, Q. - H.; Stiller, K.; Olsson, E.; Andren, H. - O.; Berastegui, P.; Johansson, L. - G. |
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Concentration profiles across twin boundaries in YBa2Cu3O6+d |
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Journal Article |
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1997 |
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Physical Review |
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Phys. Rev. |
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B56 |
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11997-12003 |
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Atom Probe Field Ion Microscopy |
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2592 |
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Isheim, Dieter; Kaszpurenko, Jason; Yu, Dong; Mao, Zugang; Seidman, David N.; Arslan, Ilke |
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3-D Atomic-Scale Mapping of Manganese Dopants in Lead Sulfide Nanowires |
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Journal Article |
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2012 |
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J. Phys. Chem. C |
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The Journal of Physical Chemistry C |
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116 |
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6595-6600 |
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Dopants in nanowires, whether intentional or unintentional, can ultimately control the material?s properties and, therefore, need to be understood on the atomic scale. We study vapor?liquid?solid grown manganese-doped lead sulfide nanowires by atom-probe tomography for the first time for lead salt materials. The three-dimensional chemical concentration maps at the atomic scale demonstrate a radial distribution profile of Mn ions, with a concentration of only 0.18 and 0.01 at. % for MnCl2 and Mn-acetate precursors, respectively. The ability to characterize these small concentrations of dopant atoms in Pb1?xMnxS nanowires (x = 0.0036 and 0.0002), important for spintronic and thermoelectric devices, sets a platform for similar analyses for all nanostructures. First-principles calculations confirm that Mn atoms substitute for Pb in the PbS structure. |
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American Chemical Society |
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1932-7447 |
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doi: 10.1021/jp300162t |
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NU @ karnesky @ |
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11346 |
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Li, Yong; Langdon, Terence G. |
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Creep behavior of an Al-6061 metal matrix composite reinforced with alumina particulates |
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Journal Article |
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1997 |
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Acta Materialia |
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Acta Mater. |
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45 |
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11 |
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4797-4806 |
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Creep tests were conducted on an Al-6061 matrix alloy reinforced with 20 vol.% of irregularly shaped Al2O3 particulates. The composite was fabricated using an ingot metallurgy technique and the creep properties were determined at temperatures from 623 to 773 K. The results show high values for both the apparent stress exponent (up to > 10) and the apparent activation energy for creep (~ 200–275 kJ/mol) but it is demonstrated, by incorporating a threshold stress into the analysis, that the true stress exponent is close to 3 and the true activation energy is close to the value for diffusion of Mg in the Al matrix. The results suggest that creep is controlled by the viscous glide of dislocations in the Al-6061 matrix alloy. Very fast creep rates are observed at the highest stress levels owing to the breakaway of dislocations from their solute atom atmospheres. Direct comparison shows that the creep resistance of this composite is less than in an Al-6061 alloy reinforced with 20 vol.% of Al2O3 microspheres. This difference is attributed to the creation of additional precipitates in the microsphere-reinforced composite because of an interfacial reaction between the matrix alloy and the reinforcement. |
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NU @ karnesky @ |
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562 |
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Erneman, J.; Schwind, M.; Liu, P.; Nilsson, J. O.; Andren, H. O.; Agren, J. |
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Precipitation reactions caused by nitrogen uptake during service at high temperatures of a niobium stabilised austenitic steel |
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Journal Article |
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2004 |
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Acta Materialia |
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Acta Mater. |
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52 |
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4337-4350 |
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9326 |
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Zackrisson, J.; Rolander, U.; Jansson, B.; Andren, H. - O. |
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Microstructure and performance of a cermet material heat-treated in nitrogen |
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Journal Article |
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2000 |
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Acta Materialia |
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Acta Mater. |
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48 |
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4281-4291 |
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9022 |
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Liu, J.; Zhirnov, V. V.; Choi, W. B.; Wojak, G. J.; Myers, A. F.; Cuomo, J. J.; Hren, J. J. |
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Electron emission from a hydrogenated diamond surface |
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Journal Article |
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1996 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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69 |
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4038-4040 |
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Field Emission |
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2037 |
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