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Choi, W. B.; Cuomo, J. J.; Zhirnov, V. V.; Myers, A. F.; Hren, J. J. |
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Publication  |
Field emission from silicon and molybdenum tips coated with diamond powder by dielectrophoresis |
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Journal Article |
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1996 |
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Abstract |
Applied Physics Letters |
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Corporate Author |
Appl. Phys. Lett. |
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Publisher |
68 |
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Summary Language |
720-722 |
Series Editor |
Field Emission |
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2035 |
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Liu, J.; Zhirnov, V. V.; Choi, W. B.; Wojak, G. J.; Myers, A. F.; Cuomo, J. J.; Hren, J. J. |
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Electron emission from a hydrogenated diamond surface |
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Journal Article |
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1996 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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69 |
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4038-4040 |
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Field Emission |
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2037 |
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Schlesser, R.; McClure, M. T.; Choi, W. B.; Hren, J. J.; Sitar, Z. |
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Energy distribution of field emitted electrons from diamond coated molybdenum tips |
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Journal Article |
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1997 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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70 |
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1596-1598 |
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Field Emission |
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2452 |
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Liu, J.; Zhirnov, V. V.; Wojak, G. J.; Meyers, A. F.; Choi, W. B.; Hren, J. J.; Wolter, S. D.; McClure, M. T.; Stoner, B. R.; Glass, J. |
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Electron emission from diamond coated silicon field emitters |
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Journal Article |
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1994 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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65 |
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2842-2844 |
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Field Emission |
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3128 |
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Kellogg, G. L.; Brenner, S. S. |
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Field ion microscopy and imaging atom-probe mass spectroscopy of superconducting YBa2Cu3O7-x |
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Journal Article |
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1987 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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51 |
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FIM IAP 123 high Tc superconductor |
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3863 |
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Sanwald, R. C.; Ranganathan, S.; Hren, J. J. |
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Computer-simulated ion-emission images of dislocations: Screw dislocation at the center of {420} |
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Journal Article |
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1966 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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9 |
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computer simulation; Field Ion Microscopy |
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5862 |
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Brenner, S. S.; Mckinney, J. T. |
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On the ionisation state of field evaporated atoms as measured in the field ion microscope-atom probe |
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Journal Article |
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1968 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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13 |
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29-32 |
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calibration and charge state studies; atom probe field ion microscopy |
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5965 |
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Zhang, Y.; Warren, P. J.; Cerezo, A.; Harland, C. L.; Davies, H. A. |
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Partitioning behavior and the effect of Co on the Curie temperature of nanocomposite PrFeCoB hard magnetic alloys |
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Journal Article |
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2001 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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79 |
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797 |
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9071 |
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Chen, Yu-chen Karen; Chu, Yong S.; Yi, JaeMock; McNulty, Ian; Shen, Qun; Voorhees, Peter W.; Dunand, David C. |
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Morphological and topological analysis of coarsened nanoporous gold by x-ray nanotomography |
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Journal Article |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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96 |
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4 |
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043122-043122 |
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computerised tomography; diffusion; gold alloys; nanoporous materials; phase separation; silver alloys; X-ray microscopy |
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We used x-ray nanotomography to characterize the three-dimensional (3D) morphology and topology of dealloyed nanoporous gold after coarsening. The interface shape distribution obtained from the nanotomography measurement shows that the coarsening does not proceed by bulk diffusion. The surface normal distribution shows that the morphology of the nanoporous gold is anisotropic. The topology of nanoporous gold is similar to that of other bicontinuous structures created by phase separation, despite the radically different method used to produce the structures. This work opens the door to time-resolved, in situ studies of coarsening of nanoporous gold in 3D. |
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0003-6951 |
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NU @ m-krug @ 110 |
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10847 |
| Permanent link to this record |
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Holzworth, M.R.; Rudawski, N.G.; Pearton, S.J.; Jones, K.S.; Lu, L.; Kang, T.S.; Ren, F.; Johnson, J.W. |
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Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor |
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Journal Article |
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2011 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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98 |
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12 |
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122103-3 |
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aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; insulated gate field effect transistors; reliability; scanning electron microscopy; transmission electron microscopy |
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A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors. |
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NU @ karnesky @ |
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11102 |
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