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Holzworth, M.R.; Rudawski, N.G.; Pearton, S.J.; Jones, K.S.; Lu, L.; Kang, T.S.; Ren, F.; Johnson, J.W. |
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Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor |
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Journal Article |
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2011 |
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Abstract |
Applied Physics Letters |
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Appl. Phys. Lett. |
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98 |
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12 |
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Summary Language |
122103-3 |
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aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; insulated gate field effect transistors; reliability; scanning electron microscopy; transmission electron microscopy |
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Abbreviated Series Title |
A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors. |
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NU @ karnesky @ |
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11102 |
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Bledzki, A. K.; Lieser, J.; Wacker, G.; Frenzel, H. |
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Characterization of the surfaces of treated glass fibers with different methods of investigation |
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1997 |
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Compos. Interfaces |
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5 |
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41-53 |
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2620 |
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Rendulic, K. D.; Knor, Z. |
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Chemisorption and gas promoted field evaporation |
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Journal Article |
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1967 |
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Surface Science |
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Surf. Sci. |
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7 |
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field evaporation processes and theory; Field Evaporation |
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5929 |
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Liu, W.; Ren, D. M.; Bao, C. L.; Tsong, T. T. |
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Chemisorption of CO and methanation on Rh surfaces at low temperature and low pressure, an atom-probe FIM study |
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Journal Article |
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1987 |
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Journal de Physique |
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J. de Phys. |
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48-C6 |
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3887 |
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Serena, P. A.; Escapa, L.; Saenz, J. J.; Garcia, N.; Rohrer, H. |
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Coherent electron-emission from point sources |
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Journal Article |
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1988 |
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J. Microsc. |
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152 |
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4186 |
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Shieh, J. L.; Ren, R. J.; Shieh, T. J.; Klemer, D. P.; Chen, C. Y. |
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Comparison of a triangular-shape field emitter array and flat surface-emitter vacuum diodes |
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Journal Article |
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1993 |
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Journal of Vacuum Science & Technology A |
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J. Vac. Sci. Technol. A |
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B11 |
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5480 |
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Kelwing, T.; Naumann, A.; Trentzsch, M.; Trui, B.; Herrmann, L.; Mutas, S.; Graetsch, F.; Carter, R.; Stephan, R.; Kücher, P.; Hansch, W. |
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Comparison of MOCVD- and ALD-Deposited HfZrO[sub:4] Gate Dielectrics for 32-nm High-Performance Logic SOI CMOS Technologies |
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Journal Article |
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2010 |
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Electron Device Letters, IEEE |
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31 |
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10 |
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1149-1151 |
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CMOS integrated circuits; Mocvd; Rutherford backscattering; X-ray photoelectron spectra; atomic layer deposition; hafnium compounds; high-k dielectric thin films; leakage currents; silicon-on-insulator; HfZrO[sub:4]; Rutherford backscattering spectrometry; X-ray photoelectron spectroscopy; atom probe tomography; atomic layer deposition; capacitance equivalent thickness; complementary metal-oxide-semiconductor device; electrical parameter; gate dielectrics; gate leakage current; high-k gate dielectric; high-performance logic SOI CMOS technology; high-volume manufacturing; metal-organic chemical vapor deposition; optical inline measurement; size 32 nm; threshold voltage |
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For the first time, HfZrO[sub:4] dielectrics deposited with metal-organic chemical vapor deposition (MOCVD) as well as atomic layer deposition (ALD) have been investigated as high-k gate dielectric for 32-nm high-performance logic SOI complementary metal-oxide-semiconductor devices in this letter. The composition of the HfZrO[sub:4] films has been analyzed in detail by atom probe tomography, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. Optical inline measurements and electrical parameters such as gate leakage current, capacitance equivalent thickness, threshold voltage, and performance as well as reliability data have been taken into account to directly compare both deposition methods. All parameters indicate a comparable behavior for MOCVD and ALD. Therefore, MOCVD has been demonstrated to be a promising alternative to ALD in high-volume manufacturing. |
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0741-3106 |
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NU @ karnesky @ |
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10970 |
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Warren, P. J.; Grovenor, M., C R |
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Comparison to STEM and atom probe methods for chemical analysis of grain boundaries in commercial Al alloys |
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Journal Article |
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1995 |
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Materials Science Forum |
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Mater. Sci. Forum |
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189-190 |
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115-120 |
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3D Atom Probe, Aluminum alloys |
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The mechanical properties of grain boundaries in aluminium alloys appear to be very strongly affected by subtle changes in the local chemistry. Due to these microstructural features being on the nanometre scale they are at the limit of conventional TEM based analysis techniques. X-ray and atom probe microanalysis techniques have been applied to the study of grain boundary chemistry in a commercial aluminium alloy. A variety of heat treatments resulting in different stress corrosion cracking susceptibilities have been invesigated. This paper compares typical analyses from one heat treatment to show that the combination of these two techniques with their quite different intrinsic advantages and limitations allows clearer characterisation of the variations in grain boundary chemistry. |
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2367 |
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Caballero, F.G.; Yen, Hung-Wei; Miller, M.K.; Yang, Jer-Ren; Cornide, J.; Garcia-Mateo, C. |
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Complementary use of transmission electron microscopy and atom probe tomography for the examination of plastic accommodation in nanocrystalline bainitic steels |
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Journal Article |
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2011 |
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Acta Materialia |
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In Press |
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Corrected Proof |
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Bainite; Steels; Three-dimensional atom probe; Transmission electron microscopy |
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A displacive transformation involves the motion of a glissile interface. As in work hardening, its motion can be halted by defects such as dislocations, stacking faults or twins in the austenite. The defects are created when the shape deformation accompanying bainite growth is accommodated by plastic relaxation of the surrounding austenite. The growing plate stops when it collides with the austenite grain boundary. Because transformation from strong austenite leads to fine plates, alloys can be designed such that the bainite transformation is suppressed to low temperatures (125–350 °C), leading to a nanoscale bainitic microstructure. Complementary high-resolution transmission electron microscopy and atom probe tomography have provided new experimental evidence on the accommodation of transformation strain, a subject critically relevant to understanding the atomic mechanisms controlling bainitic ferrite growth. |
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1359-6454 |
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<p><br/>A displacive transformation involves the motion of a glissile interface. As in work hardening, its motion can be halted by defects such as dislocations, stacking faults or twins in the austenite. The defects are created when the shape deformation accompanying bainite growth is accommodated by plastic relaxation of the surrounding austenite. The growing plate stops when it collides with the austenite grain boundary. Because transformation from strong austenite leads to fine plates, alloys can be designed such that the bainite transformation is suppressed to low temperatures (125-350��C), leading to a nanoscale bainitic microstructure. Complementary high-resolution transmission electron microscopy and atom probe tomography have provided new experimental evidence on the accommodation of transformation strain, a subject critically relevant to understanding the atomic mechanisms controlling bainitic ferrite growth.</p> |
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NU @ karnesky @ 5 |
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11143 |
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Ren, D. M.; Tsong, T. T. |
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Composition depth profiles of PtRh alloys in surface segregation and cosegregation with sulfur impurities |
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Journal Article |
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1987 |
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Surface Science |
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Surf. Sci. |
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184 |
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3924 |
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