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Type Cai, G. – J.; Lundin, L.; Andren, H. – O.; Svensson, L. E.
  Publication Atom-probe investigation of precipitation in 12% Cr steel weld metals Volume Journal Article
Pages 1994
  Abstract Applied Surface Science  
  Corporate Author Appl. Surf. Sci.  
Publisher 76/77  
Editor
  Summary Language 248-254 Series Editor atom probe field ion microscopy  
Abbreviated Series Title
  Series Issue ISSN  
Medium
  Expedition Notes  
Call Number  
Contribution Id  
Serial URL ISBN  
no 3064
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Menand, A.; Zapolsky-Tatarenko, H.; Nerac-Partaix, A. Atom-probe investigations of TiAl alloys Journal Article 1998 Materials Science and Engineering A Mater. Sci. Eng. A A250 55-64 3D Atom Probe, Intermetallics Atom probe field ion microscopy (APFIM) and tomographic atom probe (TAP) have been used to study TiAi-based alloys. The element concentrations, the influence of additional elements such as Cr or Nb as well as the solubility of oxygen in alpha(2) (Ti3Al) and gamma (TiAl) phases in compounds with nominal concentration Ti54Al46 and Ti58Al42 have been determined. By using the detection of oxygen atoms as a very local probe, the present investigation revealed the existence of some intermediate phases during the phase transformation alpha --> gamma. The presence of the oxygen atoms during this transformation gives some peculiarities on the transformation path. The appearance of some metastable phases may be explained by the existence of the homologous series Ti2n-1Aln where n is an integer varying from 1 (stoichiometry TiAl) to infinity (phase alpha(2) Ti2Al). (C) 1998 Elsevier Science S.A. All rights reserved. no 2315
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Soffa, W. A.; Brenner, S. S.; Camus, P. P.; Miller, M. K. Atom-probe studies of precipitation in iron-chromium-cobalt alloys Book Chapter 1982 Proc. 29th IFES, Gothenburg FeCrCo Chromindur APFIM Almqvist and Wiksell Stockholm Andren, H.-O.; Norden, H. no 8288
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Heck, P. R.; Pellin, M. J.; Davis, A. M.; Martin, I.; Renaud, I.; Benbalagh, R.; Isheim, D.; Seidman, D. N.; Hiller, J.; Stephan, T.; Lewis, R. S.; Savina, M. R.; Maine, A.; Elam, J.; Staermann, F. J.; Zhao, X.; Daulton, T. L.; Amari, S. Atom-Probe Tomographic Analyses of Presolar Silicon Carbide Grains and Meteoric Nanodiamonds First Results on Silicon Carbide Abstract 2010 40th Lunar and Planetary Science Conference no NU @ karnesky @ 10734
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Lauhon, Lincoln J.; Adusumilli, Praneet; Ronsheim, Paul; Flaitz, Philip L.; Lawrence, Dan Atom-Probe Tomography of Semiconductor Materials and Device Structures Journal Article 2009 MRS Bulletin 34 10 738-743 The development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of semiconductor device dimensions, the integration of new materials and interfaces, and the optimization of evolving fabrication processes. Particularly pressing concerns include the variability in device performance due to discrete impurity atom distributions, the phase and interface stability in contacts and gate dielectrics, and the validation of simulations of impurity diffusion. This overview of APT of semiconductors features research on metal-silicide contact formation and phase control, silicon field-effect transistors, and silicon and germanium nanowires. Work on silicide contacts to silicon is reviewed to demonstrate impurity characterization in small volumes and indicate how APT can facilitate defect mitigation and process optimization. Impurity contour analysis of a pFET semiconductor demonstrates the site-specificity that is achievable with current APTs and highlights complex device challenges that can be uniquely addressed. Finally, research on semiconducting nanowires and nanowire heterostructures demonstrates the potential for analysis of materials derived from bottom-up synthesis methods. no NU @ karnesky @ 10683
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Seidman, David N.; Current, Michael I.; Pramanik, Dipankar; Wei, Ching-Yeu Atomic resolution observations of the point defect structure of depleted zones in ion-irradiated metals Journal Article 1982 Journal of Nuclear Materials J. Nucl. Mater. 108-109 67-68 The previous termpoint defectnext term structure of individual depleted zones (DZs) created by a variety of different projectile ions, with energies in the range 1590 keV, was studied employing the field-ion microscope technique [19]. The irradiations were performed in situ at a temperature of less than. 15 K in the case of tungsten and 40 K for platinum. The fluence was always less then 1013 ions cm−2, so that each depleted zone detected was created by a single energetic projectile ion. The following variables were studied: (1) the effect of varying the initial energy of the projectile ion at constant projectile mass; (2) the effect of varying the projectile mass at constant initial energy of the projectile ion; and (3) the non-linear effects produced by employing dimer ions (W+2 and Ag+2). The analyses of the depleted zones consisted of measuring and/or determining the following quantities: (1) the number of vacancies per DZ; (2) the spatial distribution of self-interstitial atoms around the DZs in the case of tungsten; (3) the dimensions of the DZs; (4) the vacancy concentration per DZ; (5) the radial distribution function of the vacancies within each DZ; (6) the radiation damage profiles due to the cumulative effects of many DZs; and (7) the non-linear effects produced by the dimer irradiations. The results are discussed and compared with different analytical theories and computer simulations of the primary state of radiation damage. no 8285
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Brenner, S. S.; Miller, M. K. Atomic scale analysis with the atom probe Journal Article 1983 J. Met. 35(3), APFIM review; atom probe field ion microscopy no 8351
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Gorman, B.P.; Guthrey, H.; Norman, A.G.; Al-Jassim, M.; Lawrence, D.; Prosa, T. Atomic Scale Characterization of Compound Semiconductors using Atom Probe Tomography: Preprint Conference Article 2011 37th IEEE Photovoltaic Specialists Conference (PVSC 37) Internal interfaces are critical in determining the performance of III-V multijunction solar cells. Studying these interfaces with atomic resolution using a combination of transmission electron microscopy (TEM), atom probe tomography (APT), and density functional calculations enables a more fundamental understanding of carrier dynamics in photovoltaic (PV) device structures. To achieve full atomic scale spatial and chemical resolution, data acquisition parameters in laser pulsed APT must be carefully studied to eliminate surface diffusion. Atom probe data with minimized group V ion clustering and expected stoichiometry can be achieved by adjusting laser pulse power, pulse repetition rate, and specimen preparation parameters such that heat flow away from the evaporating surface is maximized. Applying these improved analysis conditions to III-V based PV gives an atomic scale understanding of compositional and dopant profiles across interfaces and tunnel junctions and the initial stages of alloy clustering and dopant accumulation. Details on APT experimental methods and future in-situ instrumentation developments are illustrated. National Renewable Energy Laboratory (NREL), Golden, CO. no NU @ karnesky @ gorman2011atomic 11145
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Rendulic, K. D.; Müller, E. W. Atomic structure of platinum crystals electrolytically overgrown on field ion microscope tips Journal Article 1967 Journal of Applied Physics J. Appl. Phys. 38 electrodeposited films; Field Ion Microscopy no 5930
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Tsong, T. T.; Ren, D. M.; Ahmad, M. Atomic-layer by atomic-layer compositional depth profiling: surface segregation and impurity cosegregation of Pt-Rh and Pt-Ru alloys Journal Article 1988 Physical Review Phys. Rev. B38 no 4213
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