| |
Records |
Links |
|
Type |
Cai, G. – J.; Lundin, L.; Andren, H. – O.; Svensson, L. E. |
| |
Publication |
Atom-probe investigation of precipitation in 12% Cr steel weld metals |
Volume |
Journal Article |
Pages |
1994 |
| |
Abstract |
Applied Surface Science |
|
| |
Corporate Author |
Appl. Surf. Sci. |
|
Publisher |
76/77 |
|
Editor |
|
| |
Summary Language |
248-254 |
Series Editor |
atom probe field ion microscopy |
|
Abbreviated Series Title |
|
| |
Series Issue |
|
ISSN |
|
|
Medium |
|
| |
Expedition |
|
Notes |
|
|
Call Number |
|
|
Contribution Id |
|
|
Serial |
|
URL |
|
ISBN |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
|
|
3064 |
| Permanent link to this record |
| |
|
| |
|
Menand, A.; Zapolsky-Tatarenko, H.; Nerac-Partaix, A. |
|
Atom-probe investigations of TiAl alloys |
|
Journal Article |
|
1998 |
|
Materials Science and Engineering A |
|
Mater. Sci. Eng. A |
|
A250 |
|
|
|
55-64 |
|
3D Atom Probe, Intermetallics |
|
Atom probe field ion microscopy (APFIM) and tomographic atom probe (TAP) have been used to study TiAi-based alloys. The element concentrations, the influence of additional elements such as Cr or Nb as well as the solubility of oxygen in alpha(2) (Ti3Al) and gamma (TiAl) phases in compounds with nominal concentration Ti54Al46 and Ti58Al42 have been determined. By using the detection of oxygen atoms as a very local probe, the present investigation revealed the existence of some intermediate phases during the phase transformation alpha --> gamma. The presence of the oxygen atoms during this transformation gives some peculiarities on the transformation path. The appearance of some metastable phases may be explained by the existence of the homologous series Ti2n-1Aln where n is an integer varying from 1 (stoichiometry TiAl) to infinity (phase alpha(2) Ti2Al). (C) 1998 Elsevier Science S.A. All rights reserved. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
|
|
2315 |
| Permanent link to this record |
| |
|
| |
|
Soffa, W. A.; Brenner, S. S.; Camus, P. P.; Miller, M. K. |
|
Atom-probe studies of precipitation in iron-chromium-cobalt alloys |
|
Book Chapter |
|
1982 |
|
Proc. 29th IFES, Gothenburg |
|
|
|
|
|
|
|
|
|
FeCrCo Chromindur APFIM |
|
|
|
|
|
|
|
|
|
Almqvist and Wiksell |
|
Stockholm |
|
Andren, H.-O.; Norden, H. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
|
|
8288 |
| Permanent link to this record |
| |
|
| |
|
Heck, P. R.; Pellin, M. J.; Davis, A. M.; Martin, I.; Renaud, I.; Benbalagh, R.; Isheim, D.; Seidman, D. N.; Hiller, J.; Stephan, T.; Lewis, R. S.; Savina, M. R.; Maine, A.; Elam, J.; Staermann, F. J.; Zhao, X.; Daulton, T. L.; Amari, S. |
|
Atom-Probe Tomographic Analyses of Presolar Silicon Carbide Grains and Meteoric Nanodiamonds – First Results on Silicon Carbide |
|
Abstract |
|
2010 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
40th Lunar and Planetary Science Conference |
|
|
|
no |
|
NU @ karnesky @ |
|
10734 |
| Permanent link to this record |
| |
|
| |
|
Lauhon, Lincoln J.; Adusumilli, Praneet; Ronsheim, Paul; Flaitz, Philip L.; Lawrence, Dan |
|
Atom-Probe Tomography of Semiconductor Materials and Device Structures |
|
Journal Article |
|
2009 |
|
MRS Bulletin |
|
|
|
34 |
|
10 |
|
738-743 |
|
|
|
The development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of semiconductor device dimensions, the integration of new materials and interfaces, and the optimization of evolving fabrication processes. Particularly pressing concerns include the variability in device performance due to discrete impurity atom distributions, the phase and interface stability in contacts and gate dielectrics, and the validation of simulations of impurity diffusion. This overview of APT of semiconductors features research on metal-silicide contact formation and phase control, silicon field-effect transistors, and silicon and germanium nanowires. Work on silicide contacts to silicon is reviewed to demonstrate impurity characterization in small volumes and indicate how APT can facilitate defect mitigation and process optimization. Impurity contour analysis of a pFET semiconductor demonstrates the site-specificity that is achievable with current APTs and highlights complex device challenges that can be uniquely addressed. Finally, research on semiconducting nanowires and nanowire heterostructures demonstrates the potential for analysis of materials derived from bottom-up synthesis methods. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
NU @ karnesky @ |
|
10683 |
| Permanent link to this record |
| |
|
| |
|
Seidman, David N.; Current, Michael I.; Pramanik, Dipankar; Wei, Ching-Yeu |
|
Atomic resolution observations of the point defect structure of depleted zones in ion-irradiated metals |
|
Journal Article |
|
1982 |
|
Journal of Nuclear Materials |
|
J. Nucl. Mater. |
|
108-109 |
|
|
|
67-68 |
|
|
|
The previous termpoint defectnext term structure of individual depleted zones (DZs) created by a variety of different projectile ions, with energies in the range 15–90 keV, was studied employing the field-ion microscope technique [1–9]. The irradiations were performed in situ at a temperature of less than. 15 K in the case of tungsten and 40 K for platinum. The fluence was always less then 1013 ions cm−2, so that each depleted zone detected was created by a single energetic projectile ion. The following variables were studied: (1) the effect of varying the initial energy of the projectile ion at constant projectile mass; (2) the effect of varying the projectile mass at constant initial energy of the projectile ion; and (3) the non-linear effects produced by employing dimer ions (W+2 and Ag+2). The analyses of the depleted zones consisted of measuring and/or determining the following quantities: (1) the number of vacancies per DZ; (2) the spatial distribution of self-interstitial atoms around the DZs in the case of tungsten; (3) the dimensions of the DZs; (4) the vacancy concentration per DZ; (5) the radial distribution function of the vacancies within each DZ; (6) the radiation damage profiles due to the cumulative effects of many DZs; and (7) the non-linear effects produced by the dimer irradiations. The results are discussed and compared with different analytical theories and computer simulations of the primary state of radiation damage. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
|
|
8285 |
| Permanent link to this record |
| |
|
| |
|
Brenner, S. S.; Miller, M. K. |
|
Atomic scale analysis with the atom probe |
|
Journal Article |
|
1983 |
|
J. Met. |
|
|
|
35(3), |
|
|
|
|
|
APFIM review; atom probe field ion microscopy |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
|
|
8351 |
| Permanent link to this record |
| |
|
| |
|
Gorman, B.P.; Guthrey, H.; Norman, A.G.; Al-Jassim, M.; Lawrence, D.; Prosa, T. |
|
Atomic Scale Characterization of Compound Semiconductors using Atom Probe Tomography: Preprint |
|
Conference Article |
|
2011 |
|
37th IEEE Photovoltaic Specialists Conference (PVSC 37) |
|
|
|
|
|
|
|
|
|
|
|
Internal interfaces are critical in determining the
performance of III-V multijunction solar cells. Studying
these interfaces with atomic resolution using a
combination of transmission electron microscopy (TEM),
atom probe tomography (APT), and density functional
calculations enables a more fundamental understanding of
carrier dynamics in photovoltaic (PV) device structures.
To achieve full atomic scale spatial and chemical
resolution, data acquisition parameters in laser pulsed
APT must be carefully studied to eliminate surface
diffusion. Atom probe data with minimized group V ion
clustering and expected stoichiometry can be achieved by
adjusting laser pulse power, pulse repetition rate, and
specimen preparation parameters such that heat flow
away from the evaporating surface is maximized.
Applying these improved analysis conditions to III-V based
PV gives an atomic scale understanding of compositional
and dopant profiles across interfaces and tunnel junctions
and the initial stages of alloy clustering and dopant
accumulation. Details on APT experimental methods and
future in-situ instrumentation developments are illustrated. |
|
|
|
|
|
|
|
National Renewable Energy Laboratory (NREL), Golden, CO. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
NU @ karnesky @ gorman2011atomic |
|
11145 |
| Permanent link to this record |
| |
|
| |
|
Rendulic, K. D.; Müller, E. W. |
|
Atomic structure of platinum crystals electrolytically overgrown on field ion microscope tips |
|
Journal Article |
|
1967 |
|
Journal of Applied Physics |
|
J. Appl. Phys. |
|
38 |
|
|
|
|
|
electrodeposited films; Field Ion Microscopy |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
|
|
5930 |
| Permanent link to this record |
| |
|
| |
|
Tsong, T. T.; Ren, D. M.; Ahmad, M. |
|
Atomic-layer by atomic-layer compositional depth profiling: surface segregation and impurity cosegregation of Pt-Rh and Pt-Ru alloys |
|
Journal Article |
|
1988 |
|
Physical Review |
|
Phys. Rev. |
|
B38 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
no |
|
|
|
4213 |
| Permanent link to this record |
