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Type Grenga, Helen E.
  Publication Twenty-Second International Field Emission Symposium Volume Report
Pages 1975
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no NU @ karnesky @ 10876
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Stiller, K.; Andren, H.O.; Andersson, M. Precipitation in maraging and martensitic chromium steels - what can we learn using 3-DAP and EFTEM Journal Article 2008 Materials Science And Technology Mater. Sci. Technol. 24 6 633-640 phase transformations; creep resistance; precipitate size; microanalysis; clustering; coarsening; reviews Two complementary techniques for the characterisation of the fine scale microstructure of materials are briefly described: three-dimensional atom probe (3-DAP) analysis and energy filtered transmission electron microscopy (EFTEM). The 3-DAP is especially suited for the characterisation of clustering and of the chemistry and size of very small precipitates, in particular when several phases are present. Energy filtered transmission electron microscopy is useful for determining size, volume fraction and number density of precipitates in the approximate size range 20-200 nm, also when several phases are present. As examples of the usefulness of a combination of these techniques, results from two types of complex martensitic steels are reviewed: the sequence of precipitation in a high strength maraging steel, Nanoflex, and the microstructure of creep resistant 9-12% Cr steels. Chalmers, Dept Appl Phys, S-41296 Gothenburg, Sweden, Email: stiller@fy.chalmers.se Maney Publishing English 0267-0836 ISI:000258409600002 no NU @ m-krug @ 10507
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Nam, A. J.; Teren, A.; Lusby, T. A.; Melmed, A. J. Benign making of sharp tips for STM and FIM: Pt, Ir, Au, Pd, and Rh Journal Article 1995 Journal of Vacuum Science & Technology A J. Vac. Sci. Technol. A 13B 4 1556-1559 Field Ion Microscopy Sharp tips for various modern microscopies, such as field-ion microscopy ~FIM! and scanning tunneling microscopy ~STM!, can be prepared by electropolishing in solutions which are relatively innocuous for the environment as well as the researcher, compared to the often hazardous solutions still in widespread use.We have made measurements of polishing times as a function of solution and voltage parameters and we report conditions for electropolishing sharp tips of Pt, Ir, Au, Pd, and Rh using relatively benign solutions. no 2761
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Tsong, T. T.; Liu, H. M.; Gao, Q. J.; Ren, D. M.; Liou, Y. Pulsed-laser atom-probe and field-ion microscope study of solid surfaces Journal Article 1987 Journal of Vacuum Science & Technology B J. Vac. Sci. Technol. B 5 5 1530-1534 The atomic structure of a solid surface can be imaged with the field‐ion microscope and the chemical species of surface atoms can be identified by time‐of‐flight atom probe. By incorporating a pulsed‐laser technique to field‐ion miscroscopy, atomic structures and atomic steps in a surface reconstruction can be studied with a spatial resolution of ∼2.5 Å and a time resolution of a few nanoseconds. The mass resolution and material applicability of a pulsed‐laser atom probe are greatly improved, and it is also an ion energy analyzer of 5 parts in 105 accuracy and resolution, and an ion reaction and dissociation time analyzer of 20 fs time resolution. Some interesting phenomena such as formation of multiple charge cluster ions and dissociation of compound ions by atomic tunneling can be studied with excellent mass, energy, and time resolution for the first time. no 3953
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Kelwing, T.; Naumann, A.; Trentzsch, M.; Trui, B.; Herrmann, L.; Mutas, S.; Graetsch, F.; Carter, R.; Stephan, R.; KuÌącher, P.; Hansch, W. Comparison of MOCVD- and ALD-Deposited HfZrO[sub:4] Gate Dielectrics for 32-nm High-Performance Logic SOI CMOS Technologies Journal Article 2010 Electron Device Letters, IEEE 31 10 1149-1151 CMOS integrated circuits; Mocvd; Rutherford backscattering; X-ray photoelectron spectra; atomic layer deposition; hafnium compounds; high-k dielectric thin films; leakage currents; silicon-on-insulator; HfZrO[sub:4]; Rutherford backscattering spectrometry; X-ray photoelectron spectroscopy; atom probe tomography; atomic layer deposition; capacitance equivalent thickness; complementary metal-oxide-semiconductor device; electrical parameter; gate dielectrics; gate leakage current; high-k gate dielectric; high-performance logic SOI CMOS technology; high-volume manufacturing; metal-organic chemical vapor deposition; optical inline measurement; size 32 nm; threshold voltage For the first time, HfZrO[sub:4] dielectrics deposited with metal-organic chemical vapor deposition (MOCVD) as well as atomic layer deposition (ALD) have been investigated as high-k gate dielectric for 32-nm high-performance logic SOI complementary metal-oxide-semiconductor devices in this letter. The composition of the HfZrO[sub:4] films has been analyzed in detail by atom probe tomography, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. Optical inline measurements and electrical parameters such as gate leakage current, capacitance equivalent thickness, threshold voltage, and performance as well as reliability data have been taken into account to directly compare both deposition methods. All parameters indicate a comparable behavior for MOCVD and ALD. Therefore, MOCVD has been demonstrated to be a promising alternative to ALD in high-volume manufacturing. 0741-3106 no NU @ karnesky @ 10970
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Abarenkov, I. V.; Bar'yudin, L. E. A simple model for the adsorption of a monovalent atom on a metal surface and the field desorption Journal Article 1992 Journal of Physics: Condensed Matter J. Phys.: Condens. Matter 4 9 2239-2246 Field Ion Microscopy The adsorption of an atom with one valence electron on a metal surface and the field desorption of this atom are considered in this paper. A very simple one-electron model is shown to describe properly the general features of the processes considered. yes 5187
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Wang, Q.; Kinkus, T. J.; Ren, D. G. Markov process analysis of atom probe data Journal Article 1990 Chinese Physics Letters Chin. Phys. Lett. 7 8 353 atom probe field ion microscopy A geometry model of field evaporation process is set up; with this model the field evaporation process can be described as Markov process. Its application to the earliest stage of phase transition is studied. For comparison, Camus' system Fe-Cr 45 at.% is calculated agin, and the same result is extracted from our method and intimated in our experimental data. no 4291
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Bakó, Botond; Clouet, Emmanuel; Dupuy, Laurent M.; Blétry, Marc Dislocation dynamics simulations with climb: kinetics of dislocation loop coarsening controlled by bulk diffusion Journal Article 2011 Philosophical Magazine Philosophical Magazine 91 23 3173-3191 * dislocation climb, * dislocation loops, * coarsening, * diffusion, * dislocation dynamics Dislocation climb mobilities, assuming vacancy bulk diffusion, are derived and implemented in dislocation dynamics simulations to study the coarsening of vacancy prismatic loops in fcc metals. When loops cannot glide, comparison of the simulations with a coarsening model based on the line tension approximation shows good agreement. Dislocation dynamics simulations with both glide and climb are then performed. Allowing for glide of the loops along their prismatic cylinders leads to faster coarsening kinetics, as direct coalescence of the loops is now possible. Taylor & Francis 1478-6435 doi: 10.1080/14786435.2011.573815 no NU @ karnesky @ 11160
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Brenner, S. S.; Mckinney, J. T. On the ionisation state of field evaporated atoms as measured in the field ion microscope-atom probe Journal Article 1968 Applied Physics Letters Appl. Phys. Lett. 13 29-32 calibration and charge state studies; atom probe field ion microscopy no 5965
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Macrander, Albert T.; Yamamoto, Masahiko; Seidman, David N.; Brenner, S. S. Statistics of the atom-by-atom dissection of planes in an atom-probe field-ion microscope: The number of atoms detected per plane Journal Article 1983 Review of Scientific Instruments Rev. Sci. Instrum. 54 9 1077-1084 DNS-quantitative The statistics of the atom-by-atom dissection of planes, in the atom-probe field-ion microscope, have been investigated. Tungsten specimens oriented in the [110] direction, with the probe hole over the center of the plane, were slowly pulsed field-evaporated on a plane-by-plane basis, and statistical analyses were made on the number of tungsten atoms detected per plane; 30 separate slow dissection experiments were performed. Observed fluctuations in the number of atoms per plane are used to infer a range of allowable values for the detection efficiency. We find that, in some cases, the number of atoms per plane can be described as following a binomial distribution. From these results detection efficiencies in the range 0.11 to 0.54 were inferred. This range of efficiencies can be understood with the aid of field-ion desorption images. In addition, a value for the detection efficiency of 0.2 was obtained under the assumption that all atoms in the area projected by the probe hole, along the specimen radius, were analyzed. Thus, we find that this geometrical procedure, a first-order approach to the problem, yields a reasonable result. Also, the results of a Monte Carlo simulation of atom-by-atom field evaporation of a large number of planes are presented. The Monte Carlo simulation shows that if a binomial distribution is obtained, the uncertainty in concentrations determined by the atom-probe technique will have only a small component owing to the uncertainty in the number of solvent specimen atomsthis is subject to the caveat that there are no special problems with the field-evaporation behavior of the solvent atoms. Although the statistical analyses were applied to a specific crystallographic plane and position, the methodology is reasonably general and can be applied to other situations. no NU @ karnesky @ 36
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