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Juraszek, J.; Grenier, A.; Teillet, J.; Cadel, E.; Tiercelin, N.; Monnet, I.; Toulemonde, M. |
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Atom probe tomography of swift ion irradiated multilayers |
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Journal Article |
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2009 |
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
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267 |
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6 |
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912-916 |
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Ion beam mixing; atom probe tomography; multilayers; swift ion irradiation |
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Nanometer scale layered systems are well suited to investigate atomic transport processes induced by high-energy electronic excitations in materials, through the characterization of the interface transformation. In this study, we used the atom probe technique to determine the distribution of the different elements in a (amorphous-Fe2Tb 5 nm/hcp-Co 3 nm)20 multilayer before and after irradiation with Pb ions in the electronic stopping power regime. Atom probe tomography is based on reconstruction of a small volume of a sharp tip evaporated by field effect. It has unique capabilities to characterize internal interfaces and layer chemistry with sub-nanometer scale resolution in three dimensions. Depth composition profiles and 3D element mapping have been determined, evidencing for asymmetric interfaces in the as-deposited sample, and very efficient Fe-Co intermixing after irradiation at the fluence 7×1012 ion cm-2. Estimation of effective atomic diffusion coefficients after irradiation suggests that mixing results from interdiffusion in a molten track across the interface in agreement with the thermal spike model. |
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0168-583x |
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NU @ karnesky @ |
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10581 |
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Grenier, A.; Larde, R.; Cadel, E.; Le Breton, J.M.; Juraszek, J.; Vurpillot, F.; Tiercelin, N.; Pernod, P.; Teillet, J. |
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Structural investigation of TbCo2/Fe magnetostrictive thin films by tomographic atom probe and Mossbauer spectrometry |
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Journal Article |
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2007 |
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Journal of Magnetism and Magnetic Materials |
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Proceedings of the 17th International Conference on Magnetism, The International Conference on Magne |
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310 |
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2, Part 3 |
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2215-2216 |
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Magnetostrictive multilayer; Tb-Co-Fe; Tomographic atom probe; Mossbauer spectrometry |
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Sputtered TbCo2/Fe magnetostrictive multilayers have been deposited on both island posts and flat substrates and analysed by laser-assisted tomographic atom probe and 57Fe Mossbauer spectrometry. The three-dimensional reconstructions of the layers were obtained, allowing the analysis of the interfaces. Differences are revealed, as the Fe-on-TbCo2 interface is thinner than the TbCo2-on-Fe interface. This effect is attributed to Fe/Co interdiffusion, controlled by the establishment of the Tb layer. Fe layers are well crystallized. |
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NU @ m-krug @ |
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9974 |
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Brenner, S. Sidney |
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FIM/Atom Probe Study of Grain Boundaries in Ni3Al |
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NU @ karnesky @ |
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10911 |
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Gorman, B.P.; Guthrey, H.; Norman, A.G.; Al-Jassim, M.; Lawrence, D.; Prosa, T. |
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Atomic Scale Characterization of Compound Semiconductors using Atom Probe Tomography: Preprint |
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Conference Article |
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2011 |
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37th IEEE Photovoltaic Specialists Conference (PVSC 37) |
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Internal interfaces are critical in determining the
performance of III-V multijunction solar cells. Studying
these interfaces with atomic resolution using a
combination of transmission electron microscopy (TEM),
atom probe tomography (APT), and density functional
calculations enables a more fundamental understanding of
carrier dynamics in photovoltaic (PV) device structures.
To achieve full atomic scale spatial and chemical
resolution, data acquisition parameters in laser pulsed
APT must be carefully studied to eliminate surface
diffusion. Atom probe data with minimized group V ion
clustering and expected stoichiometry can be achieved by
adjusting laser pulse power, pulse repetition rate, and
specimen preparation parameters such that heat flow
away from the evaporating surface is maximized.
Applying these improved analysis conditions to III-V based
PV gives an atomic scale understanding of compositional
and dopant profiles across interfaces and tunnel junctions
and the initial stages of alloy clustering and dopant
accumulation. Details on APT experimental methods and
future in-situ instrumentation developments are illustrated. |
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National Renewable Energy Laboratory (NREL), Golden, CO. |
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NU @ karnesky @ gorman2011atomic |
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11145 |
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Lauhon, Lincoln J.; Adusumilli, Praneet; Ronsheim, Paul; Flaitz, Philip L.; Lawrence, Dan |
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Atom-Probe Tomography of Semiconductor Materials and Device Structures |
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Journal Article |
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2009 |
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MRS Bulletin |
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34 |
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10 |
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738-743 |
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The development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of semiconductor device dimensions, the integration of new materials and interfaces, and the optimization of evolving fabrication processes. Particularly pressing concerns include the variability in device performance due to discrete impurity atom distributions, the phase and interface stability in contacts and gate dielectrics, and the validation of simulations of impurity diffusion. This overview of APT of semiconductors features research on metal-silicide contact formation and phase control, silicon field-effect transistors, and silicon and germanium nanowires. Work on silicide contacts to silicon is reviewed to demonstrate impurity characterization in small volumes and indicate how APT can facilitate defect mitigation and process optimization. Impurity contour analysis of a pFET semiconductor demonstrates the site-specificity that is achievable with current APTs and highlights complex device challenges that can be uniquely addressed. Finally, research on semiconducting nanowires and nanowire heterostructures demonstrates the potential for analysis of materials derived from bottom-up synthesis methods. |
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NU @ karnesky @ |
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10683 |
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Sha, Gang; Ringer, Simon P.; Duan, Zhi Chao; Langdon, Terence G. |
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An atom probe characterisation of grain boundaries in an aluminium alloy processed by equal-channel angular pressing |
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Journal Article |
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2009 |
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International Journal of Materials Research |
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2009 |
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12 |
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1674-1678 |
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The segregation of solute elements at the grain boundaries of an Al–Zn–Mg–Cu alloy processed by equal-channel angular pressing was characterised using three-dimensional atom probe tomography. The results show that Mg and Cu segregate strongly to the grain boundaries but Zn shows no clear segregation and even becomes depleted near the boundaries. Trace elements such as Zr, Cr, Si and Mn show no clear segregation at the grain boundaries. An increase in the number of passes leads to a decrease in the grain size but there is no clear effect on the levels of solute segregation at the boundaries. The significant segregation of certain major alloying element at the boundaries of ultrafine-grained alloys implies that the less super-saturation solutes in the matrix will be available for precipitation with a decrease in the average grain size. |
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NU @ karnesky @ |
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10772 |
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Clifton, P. H.; Larson, D. J.; Gordon, L. M.; Joester, D.; Inoue, K.; Reinhard, D. A.; Prosa, T. J.; Ulfig, R. M.; Lawrence, D.; Kelly, T. F. |
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Advances in Atom Probe Tomography Applications |
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Abstract |
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2012 |
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The 15th European Microscopy Congress |
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Atom probe tomography (APT) has been used for over 45 years, “to determine the composition of
small volumes of metals, semiconductors, and some ceramics” [1]. Although this statement is still
true some 12 years after it was written, it does not adequately capture the recent expansion and
maturation of APT into non-metallurgical applications. Historically, the low analysis success rate in
non-metallurgical applications has limited the utility of the technique for such materials. However,
recent innovations have been shown to provide substantially higher analysis yield on a wide variety
of materials [2] enabling a range of meaningful new applications for APT such as quantum wells
(QWs) and transistors.
Defects are known to have a significant effect on properties of InGaN multi-quantum-well devices
[3]. The availability of low-pulse-energy laser pulsing has allowed for high-quality and low-noise
imaging of a V defect centered above a threading dislocation (Fig. 1). This dislocation may change
the electrical properties of the QWs due to the resultant segregation of magnesium dopants.
Characterization of complicated microelectronic structures, such as transistors, which contain a
variety of materials and interfaces, has been severely limited because of analysis yield limitations.
The recent introduction of UV laser pulsing, together with a highly focused, diffraction limited, laser
spot, has provided improved yield allowing for regular analysis of real devices such as the n- and p-
MOS transistors as shown in Fig. 2.
Applications also exist in the area of organic materials. In the chiton tooth, a polysaccharide-rich
scaffold containing a number of proteins templates the formation of ultra-hard nano-crystalline iron
oxide (magnetite). The nanoscale interfaces between the mineral phase and the buried organic
scaffold are shown in Fig. 3, providing insight into the formation processes and the properties of the
composite [4].
In addition to the above, several selected examples of APT applications advances will be
presented in the current work, including light emitting diodes [5], microelectronics [6,7], solar cells
[8,9], geology [11], and cosmology [10].
[1] MK Miller, Atom Probe Tomography: Analysis at the Atomic Level, Kluwer Academic /Plenum
Publishers (2000) p.2.
[2] RM Ulfig et al, Microscopy and Microanalysis 17(S2) (2011) p. 714.
[3] CJ Humphreys et al, Springer Proc. Physics 120 (2007) p. 3.
[4] LM Gordon and D. Joester, Nature 469 (2012) p. 194.
[5] TJ Prosa et al, Applied Physics Letters 98 (2011) p. 191903.
[6] DJ Larson et al, Inst. Phys. Conf. Series 326 (2011) p. 012030.
[7] H Takamizawa et al, Applied Physics Letters, 99 (2011) p. 133502
[8] PP Choi et al, Microscopy Today (2012) in press.
[9] DJ Larson et al, Microscopy & Microanalysis (2012), submitted.
[10] D Snoeyenbos et al, 22nd Goldschmid Conference on Geochemistry (2012), submitted.
[11] P Heck et al, 43rd Lunar and Planetary Science Conference (2012), submitted. |
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NU @ karnesky @ |
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11389 |
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Brenner, S. S.; Miller, M. K.; Soffa, W. A. |
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An atom probe study of precipitation in iron-chromium alloys at low temperatures |
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Book Chapter |
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1982 |
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Proceedings of an International Conference on Solid - Solid Phase Transformations: Proceedings of the International Conference on Solid-To-Solid Phase Transformations in Inorganic Materials Ptm9 |
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Proc. Intl. Conf. Solid-Solid Phase Transform. |
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spinodal decomposition FeCr APFIM; atom probe field ion microscopy |
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TMS |
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Warrendale, PA |
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Johnson, W. C.; Howe, J. M.; Laughlin, D. E.; Soffa, W. A. |
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0873392787 |
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8871 |
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Warren, P. J.; Cerezo, A.; Smith, W., G D |
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Towards 3D lattice reconstruction with the position sensitive atom probe |
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Book Chapter |
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1998 |
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Proceedings: Microscopy and Microanalysis |
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4 |
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S2 |
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86-87 |
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3D Atom Probe, Instrumentation |
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Springer |
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New York |
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Bailey, G. W.; Alexander, K. B.; Jerome, W. G.; Bond, M. G.; McCarthy, J. J. |
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2394 |
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Hren, John J. |
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Field-ion microscopy |
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Book Whole |
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1968 |
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244 |
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APFIM-shortbib |
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Plenum Press |
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NU @ karnesky @ |
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399 |
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