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Galtrey, M.J.; Oliver, R.A.; Kappers, M.J.; McAleese, C.; Zhu, D.; Humphreys, C.J.; Clifton, P.H.; Larson, D.; Cerezo, A. |
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Compositional inhomogeneity of a high-efficiency In[sub x]Ga[sub 1 - x]N based multiple quantum well ultraviolet emitter studied by three dimensional atom probe |
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2008 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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92 |
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4 |
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041904-3 |
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III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors |
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An InxGa1−xN based multiple quantum well structure emitting in the ultraviolet, which has the highest reported efficiency (67%) at its wavelength (380 nm), was analyzed with the three-dimensional atom probe. The results reveal gross discontinuities and compositional variations within the quantum well layers on a 20–100 nm length scale. In addition, the analysis shows the presence of indium in the AlyGa1−yN barrier layers, albeit at a very low level. By comparing with analogous epilayer samples, we suggest that the quantum well discontinuities we observe may play an important role in improving the efficiency of these structures. |
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NU @ karnesky @ |
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10199 |
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