| Record |
| Title |
Adusumilli, Praneet; Lauhon, Lincoln J.; Seidman, David N.; Murray, Conal E.; Avayu, Ori; Rosenwaks, Yossi |
Year |
Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95Pt0.05/Si(100) thin films |
Abbreviated Journal |
Journal Article |
| Issue |
2009 |
Keywords |
Applied Physics Letters |
| Address |
APL |
| Thesis |
94 |
| Place of Publication |
11 |
Language |
113103_1-3 |
Original Title |
annealing, atom probe field ion microscopy, elemental semiconductors, grain boundaries, grain size, nickel alloys, platinum, semiconductor-metal boundaries, silicon, surface diffusion, surface texture, surface topography, thin films, work function |
| Series Title |
Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99Pt0.01)Si/Si(100) interface, which may be responsible for the increased resistance of (Ni0.99Pt0.01)Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi. |
Series Volume |
Northwestern Univ, Dept Mat Sci & Engn, 2220 Campus Dr, Evanston, IL 60208 USA |
Edition |
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Area |
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA |
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0003-6951 |
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yes |
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NU @ praneet @ |
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10692 |
| Permanent link to this record |
