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	Type	Holzworth, M.R.; Rudawski, N.G.; Pearton, S.J.; Jones, K.S.; Lu, L.; Kang, T.S.; Ren, F.; Johnson, J.W.
	Publication	Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor	Volume	Journal Article
Pages	2011
	Abstract	Applied Physics Letters
	Corporate Author	Appl. Phys. Lett.
Publisher	98
Editor	12
	Summary Language	122103-3	Series Editor	aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; insulated gate field effect transistors; reliability; scanning electron microscopy; transmission electron microscopy
Abbreviated Series Title	A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors.
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	Expedition	Aip	Notes
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Serial		URL		ISBN
																							no		NU @ karnesky @		11102
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