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Type Holzworth, M.R.; Rudawski, N.G.; Pearton, S.J.; Jones, K.S.; Lu, L.; Kang, T.S.; Ren, F.; Johnson, J.W.
  Publication Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor Volume Journal Article
Pages 2011
  Abstract Applied Physics Letters  
  Corporate Author Appl. Phys. Lett.  
Publisher 98  
Editor 12
  Summary Language 122103-3 Series Editor aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; insulated gate field effect transistors; reliability; scanning electron microscopy; transmission electron microscopy  
Abbreviated Series Title A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission electron microscopy and laser-assisted atom probe tomography. It was revealed that the oxide is composed of distinct Ni-oxide-rich and Al-oxide-rich layers with no Ga-oxide detected. The results provide information that is of potential importance in determining failure mechanisms and improving reliability of AlGaN/GaN high electron mobility transistors.
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no NU @ karnesky @ 11102
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