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Martinez, E.; Ronsheim, P.; Barnes, J.-P.; Rochat, N.; Py, M.; Hatzistergos, M.; Renault, O.; Silly, M.; Sirotti, F.; Bertin, F.; Gambacorti, N. |
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Publication |
Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack |
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Journal Article |
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2011 |
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Abstract |
Microelectronic Engineering |
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Proceedings of the 17th Biennial International Insulating Films on Semiconductor Conference, 17th Bi |
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88 |
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7 |
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1349-1352 |
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Metal/high-k stack; TiN; HfSiO; La; Interfacial dipole; Threshold voltage tuning; ToF-SIMS; Apt; Atr-Ftir; S-Xps |
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Abbreviated Series Title |
Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaOx layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO2 interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO2 interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment. |
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0167-9317 |
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NU @ karnesky @ |
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11170 |
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