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Type D J Larson and D Lawrence and W Lefebvre and D Olson and T J Prosa and D A Reinhard and R M Ulfig and P H Clifton and J H Bunton and D Lenz and J D Olson and L Renaud and I Martin and T F Kelly
  Publication Toward atom probe tomography of microelectronic devices Volume Journal Article
Pages 2011
  Abstract Journal of Physics: Conference Series  
  Corporate Author  
Publisher 326  
Editor 1
  Summary Language 012030 Series Editor  
Abbreviated Series Title Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel ® i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips.
  Series Issue ISSN  
Medium
  Expedition Notes  
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Contribution Id  
Serial URL ISBN  
1742-6596 no NU @ karnesky @ 11288
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