| Record |
| Title |
Chi, E. J.; Shim, J. Y.; Baik, H. K.; Lee, S. M. |
Year |
Fabrication of amorphous-carbon-nitride field emitters |
Abbreviated Journal |
Journal Article |
| Issue |
1997 |
Keywords |
Applied Physics Letters |
| Address |
Appl. Phys. Lett. |
| Thesis |
71 |
| Place of Publication |
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Language |
324-326 |
Original Title |
Field Emission; Field emitters; Eutectic silicon; Electric currents; Carbon; Electron affinities |
| Series Title |
o improve siliconfield emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed. a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current. |
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NU @ karnesky @ |
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2540 |
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