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	Record
	Type	Chi, E. J.; Shim, J. Y.; Baik, H. K.; Lee, S. M.
	Publication	Fabrication of amorphous-carbon-nitride field emitters	Volume	Journal Article
Pages	1997
	Abstract	Applied Physics Letters
	Corporate Author	Appl. Phys. Lett.
Publisher	71
Editor
	Summary Language	324-326	Series Editor	Field Emission; Field emitters; Eutectic silicon; Electric currents; Carbon; Electron affinities
Abbreviated Series Title	o improve siliconfield emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed. a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.
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Serial		URL		ISBN
					no	NU @ karnesky @	2540
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