| |
Author |
Title |
Year |
Publication  |
Volume |
Pages |
Links |
|
|
Choi, W. B.; Cuomo, J. J.; Zhirnov, V. V.; Myers, A. F.; Hren, J. J. |
Field emission from silicon and molybdenum tips coated with diamond powder by dielectrophoresis |
1996 |
Applied Physics Letters |
68 |
720-722 |
|
|
|
Liu, J.; Zhirnov, V. V.; Choi, W. B.; Wojak, G. J.; Myers, A. F.; Cuomo, J. J.; Hren, J. J. |
Electron emission from a hydrogenated diamond surface |
1996 |
Applied Physics Letters |
69 |
4038-4040 |
|
|
|
Schlesser, R.; McClure, M. T.; Choi, W. B.; Hren, J. J.; Sitar, Z. |
Energy distribution of field emitted electrons from diamond coated molybdenum tips |
1997 |
Applied Physics Letters |
70 |
1596-1598 |
|
|
|
Liu, J.; Zhirnov, V. V.; Wojak, G. J.; Meyers, A. F.; Choi, W. B.; Hren, J. J.; Wolter, S. D.; McClure, M. T.; Stoner, B. R.; Glass, J. |
Electron emission from diamond coated silicon field emitters |
1994 |
Applied Physics Letters |
65 |
2842-2844 |
|
|
|
Kellogg, G. L.; Brenner, S. S. |
Field ion microscopy and imaging atom-probe mass spectroscopy of superconducting YBa2Cu3O7-x |
1987 |
Applied Physics Letters |
51 |
|
|
|
|
Sanwald, R. C.; Ranganathan, S.; Hren, J. J. |
Computer-simulated ion-emission images of dislocations: Screw dislocation at the center of {420} |
1966 |
Applied Physics Letters |
9 |
|
|
|
|
Brenner, S. S.; Mckinney, J. T. |
On the ionisation state of field evaporated atoms as measured in the field ion microscope-atom probe |
1968 |
Applied Physics Letters |
13 |
29-32 |
|
|
|
Zhang, Y.; Warren, P. J.; Cerezo, A.; Harland, C. L.; Davies, H. A. |
Partitioning behavior and the effect of Co on the Curie temperature of nanocomposite PrFeCoB hard magnetic alloys |
2001 |
Applied Physics Letters |
79 |
797 |
|
|
|
Chen, Yu-chen Karen; Chu, Yong S.; Yi, JaeMock; McNulty, Ian; Shen, Qun; Voorhees, Peter W.; Dunand, David C. |
Morphological and topological analysis of coarsened nanoporous gold by x-ray nanotomography |
2010 |
Applied Physics Letters |
96 |
043122-043122 |
|
|
|
Holzworth, M.R.; Rudawski, N.G.; Pearton, S.J.; Jones, K.S.; Lu, L.; Kang, T.S.; Ren, F.; Johnson, J.W. |
Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor |
2011 |
Applied Physics Letters |
98 |
122103-3 |
|
